A novel power UMOSFET with a variable K dielectric layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics;Journal of Semiconductors;2022-12-01
2. A New Split Gate Resurf Stepped Oxide UMOSFET Structure with High Doped Epitaxial Layer for Improving Figure of Merit (FOM);Applied Sciences;2020-11-07
3. An Optimized Structure of Split-Gate Resurf Stepped Oxide UMOSFET;Electronics;2020-05-01
4. Simulation and Result Analysis of Split Gate Resurf Stepped Oxide UMOFSET with Floating Electrode for Improved Performance;Electronics;2019-12-17
5. Ultra-low specific on-resistance vertical double-diffused metal—oxide semiconductor with a high-kdielectric-filled extended trench;Chinese Physics B;2013-02
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