Ultra-low specific on-resistance vertical double-diffused metal—oxide semiconductor with a high-kdielectric-filled extended trench-Reference-Cited by-同舟云学术

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Ultra-low specific on-resistance vertical double-diffused metal—oxide semiconductor with a high-kdielectric-filled extended trench

Published:2013-02 Issue:2 Volume:22 Page:027305
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Wang Pei,Luo Xiao-Rong,Jiang Yong-Heng,Wang Qi,Zhou Kun,Wu Li-Juan,Wang Xiao-Wei,Cai Jin-Yong,Luo Yin-Chun,Fan Ye,Hu Xia-Rong,Fan Yuan-Hang,Wei Jie,Zhang Bo

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

http://stacks.iop.org/1674-1056/22/i=2/a=027305/pdf

Reference22 articles.

1. A Review of Superjunction Vertical Diffused MOSFET

2. A novel superjunction MOSFET with improved ruggedness under unclamped inductive switching

3. Optimization of the specific on-resistance of the COOLMOS/sup TM/

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal–oxide–semiconductor device with high- κ insulator;Chinese Physics B;2018-04

2. An Optimized Super-Junction VDMOS with Breakdown Voltage Over 600 V;Journal of Low Power Electronics;2015-06-01

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