Author:
Guo Jingshu,Zhu Jiejie,Liu Siyu,Liu Jielong,Xu Jiahao,Chen Weiwei,Zhou Yuwei,Zhao Xu,Mi Minhan,Yang Mei,Ma Xiaohua,Hao Yue
Abstract
This paper studied the low-resistance ohmic contacts on InAlN/GaN with metal--organic chemical vapor deposition (MOCVD) regrowth technique. The 150-nm regrown n+-InGaN exhibits a low sheet resistance of 31 Ω/□, resulting in an extremely low contact resistance of 0.102 Ω⋅mm between n+-InGaN and InAlN/GaN channels. Mask-free regrowth process was also used to significantly improve the sheet resistance of InAlN/GaN with MOCVD regrown ohmic contacts. Then, the diffusion mechanism between n+-InGaN and InAlN during regrowth process was investigated with electrical and structural characterizations, which could benefit the further process optimization.
Subject
General Physics and Astronomy