Thermal effect of Ge 2 Sb 2 Te 5 in phase change memory device
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/8/087804/pdf
Reference14 articles.
1. Low-cost and nanoscale non-volatile memory concept for future silicon chips
2. Raman spectra and XPS studies of phase changes in Ge 2 Sb 2 Te 5 films
3. Mechanical stresses upon crystallization in phase change materials
4. Failure Analysis of Ge2Sb2Te5Based Phase Change Memory
5. Thermal Stress Analysis of $\hbox{Ge}_{1}\hbox{Sb}_{4} \hbox{Te}_{7}$-Based Phase-Change Memory Devices
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Carbon ion implantation as healing strategy for improved reliability in phase-change memory arrays;Microelectronics Reliability;2021-11
2. A comparative study on the performance of RESET based electro-thermal process in ring shaped confined Ge2Sb2Te5 and Ge1Cu2Te3 chalcogenide memory structures;Materials Today Communications;2017-12
3. Atomic-scale quantification of interdiffusion and dopant localization in GeSbTe-based memory devices;Applied Physics Letters;2016-09-12
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