A comparative study on the performance of RESET based electro-thermal process in ring shaped confined Ge2Sb2Te5 and Ge1Cu2Te3 chalcogenide memory structures-Reference-Cited by-同舟云学术

A comparative study on the performance of RESET based electro-thermal process in ring shaped confined Ge2Sb2Te5 and Ge1Cu2Te3 chalcogenide memory structures

Published:2017-12 Issue: Volume:13 Page:325-331
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Ghosh Atanu,Sinha Jayee,Chattopadhyay Sanatan

Publisher

Elsevier BV

Subject

Materials Chemistry,Mechanics of Materials,General Materials Science

Reference25 articles.

1. Overview of emerging nonvolatile memory technologies;Meena;Nanoscale Res. Lett.,2014

2. Recent Progress in Phase-Change Memory Technology;Burr;IEEE J. Emerg. Sel. Top. Circuits Syst.,2016

3. OUM. – A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications;Lai;Int. Electron Devices Meet. Tech. Dig.,2001

4. Nanowire phase change memory with carbon nanotube electrodes;Xiong;70th Device Res Conf.,2012

5. Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements;Friedrich;J. Appl. Phys.,2000

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Understanding the microstructure evolution of carbon-doped Sb2Te3 phase change material for high thermal stability memory application;Applied Physics Letters;2024-05-13

2. Investigating the Impact of Grain Boundary Width on Average Grain Size in Nanoscale Polycrystalline Microstructures: A Multi-Phase Field and Finite Element Simulation Approach;2023 8th International Conference on Computers and Devices for Communication (CODEC);2023-12-14

3. Superlattice-like Sb₇₀Se₃₀/HfO₂ thin films for high thermal stability and low power consumption phase change memory;Nanotechnology;2023-06-23

4. Influence of molybdenum doping on the structural, electrical, and optical properties of germanium telluride thin films;Journal of Materials Research and Technology;2023-05

5. Physics-Based Modeling Strategies of Phase-Change Random Access Memory;IEEE Transactions on Electron Devices;2022-12