Understanding the microstructure evolution of carbon-doped Sb2Te3 phase change material for high thermal stability memory application
Author:
Affiliation:
1. College of Science, Donghua University 1 , Shanghai 201620, China
2. State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 2 , Shanghai 200050, China
Abstract
Funder
Ministry of Science and Technology of the People's Republic of China
National Natural Science Foundation of China
Bureau of Science and Technology for Development, Chinese Academy of Sciences
Science and Technology Innovation Plan Of Shanghai Science and Technology Commission
Publisher
AIP Publishing
Link
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0206244/19945309/202101_1_5.0206244.pdf
Reference38 articles.
1. Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application
2. Storage-class memory: The next storage system technology
3. Phase-Change Memory—Towards a Storage-Class Memory
4. Recent developments in phase‐change memory
5. Memory leads the way to better computing
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