Failure Analysis of Ge2Sb2Te5Based Phase Change Memory
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference9 articles.
1. Non-volatile memory technologies: emerging concepts and new materials
2. Phase separation of a Ge2Sb2Te5 alloy in the transition from an amorphous structure to crystalline structures
3. Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films
4. Phase change memories: State-of-the-art, challenges and perspectives
5. Reliability Study of Phase-Change Nonvolatile Memories
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2. Electrode area dependent switching behavior of Ge2Sb2Se4Te1 phase change material driven by narrow voltage pulse;Applied Physics Letters;2023-06-12
3. Failure Analysis and Performance Improvement of Phase Change Memory Based on Ge2Sb2Te5;IEEE Transactions on Device and Materials Reliability;2021-06
4. Analysis of Stuck Reset Failure in Phase‐Change Memory by Calculating Phase‐Change Stress using Finite Element Simulation;physica status solidi (RRL) – Rapid Research Letters;2021-01-18
5. In situ TEM observation of void formation and migration in phase change memory devices with confined nanoscale Ge2Sb2Te5;Nanoscale Advances;2020
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