The electrical properties of n-type epitaxial InP in the temperature range 5K to 700K
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/7/i=5/a=012/pdf
Reference31 articles.
1. IONIZATION ENERGY AND IMPURITY BAND CONDUCTION OF SHALLOW DONORS IN n-GALLIUM ARSENIDE
2. Electrical Properties ofn-Type Epitaxial GaAs at High Temperatures
3. The scattering factor for geometrical magnetoresistance in GaAs
4. Far-infrared photoconductivity from the shallow donors in n-InP
5. The preparation of high purity epitaxial InP
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