The preparation of high purity epitaxial InP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference12 articles.
1. Preparation of indium phosphide;Richman,1962
2. Paper 525;Winkler,1968
3. Electron Mobility in InP
4. Epitaxial Growth of Indium Phosphide in an Open Flow System
5. The Preparation and Properties of Vapor-Deposited Epitaxial InAs[sub 1−x]P[sub x] Using Arsine and Phosphine
Cited by 65 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Transferred Electron Devices;Handbook of Microwave Technology;1995
2. Transferred Electron Devices;Components and Devices;1995
3. References;Thin Films by Chemical Vapour Deposition;1990
4. Electron mobility in heavily doped indium phosphide due to scattering by potential fluctuations;Semiconductor Science and Technology;1987-08-01
5. Vertical gradient freeze growth of large diameter, low defect density indium phosphide;Journal of Crystal Growth;1987-05
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