Carrier mobility distribution in annealed undoped LEC InP material
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
1. Effect of heat treatment on n-type bulk grown and vapour phase epitaxial indium phosphide
2. Heat Treatment of n-Type InP in Controlled Phosphorus Vapor
3. Deep Impurity Levels in InP LEC Crystals
4. Semi-insulating electrical properties of undoped inp after heat treatment in a phosphorus atmosphere
5. Compensation mechanisms in nominally undoped semi-insulating InP and comparison with undoped InP grown under stoichiometry control
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Nondestructive evaluation of differently doped InP wafers by time-resolved four-wave mixing technique;Materials Science and Engineering: B;2006-08
2. Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour;Semiconductor Science and Technology;2002-05-24
3. Evaluation of semi-insulating Ti-doped and Mn-doped InP for radiation detection;Semiconductor Science and Technology;2001-11-13
4. Hydrogen neutralization effect in bulk N-type LEC InP materials;Journal of Crystal Growth;2001-05
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