Effect of heat treatment on n-type bulk grown and vapour phase epitaxial indium phosphide
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. EFFECT OF ARSENIC PRESSURE ON HEAT TREATMENT OF LIQUID EPITAXIAL GaAs
2. Luminescence of arsenic vacancy-related defects in GaAs
3. Growth of indium phosphide films from In and P2 beams in ultra-high vacuum
4. Criteria for tipping during the liquid phase epitaxial growth of indium phosphide
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