Effect of intervalence-band interaction on relaxation time and transport coefficients for holes in non-polar semiconductors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/16/i=4/a=018/pdf
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1. Influence of alloy disorder scattering on the hole mobility of SiGe nanowires;Journal of Applied Physics;2014-12-28
2. Measurement of ballistic phonon conduction near hotspots in silicon;Applied Physics Letters;2001-05-21
3. B‐doped fully strained Si1−xGexlayers grown on Si(001) by gas‐source molecular beam epitaxy from Si2H6, Ge2H6, and B2H6: Charge transport properties;Journal of Applied Physics;1996-10-15
4. Determination of densities and mobilities of heavy and light holes inp‐type Si using reduced‐conductivity‐tensor analyses of magnetic‐field‐dependent Hall and resistivity measurements;Journal of Applied Physics;1996-10-15
5. Hole mobility measurements in heavily doped Si/sub 1-x/Ge/sub x/ strained layers;IEEE Transactions on Electron Devices;1994-07
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