Determination of densities and mobilities of heavy and light holes inp‐type Si using reduced‐conductivity‐tensor analyses of magnetic‐field‐dependent Hall and resistivity measurements-Reference-Cited by-同舟云学术

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Determination of densities and mobilities of heavy and light holes inp‐type Si using reduced‐conductivity‐tensor analyses of magnetic‐field‐dependent Hall and resistivity measurements

Published:1996-10-15 Issue:8 Volume:80 Page:4425-4428
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kim J. S.,Seiler D. G.,Ehrstein J. R.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.363403

Reference19 articles.

1. Drift Mobilities in Semiconductors. I. Germanium

2. Drift Mobilities in Semiconductors. II. Silicon

3. Drift and Conductivity Mobility in Silicon

4. Attempt to Detect High Mobility Holes in Germanium Using the Drift Mobility Technique

5. Properties of Silicon and Germanium: II

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1. Electronic scattering in doped finite superlattices;Physical Review B;2001-07-02

2. INVESTIGATION OF THE LIGHT HOLE IN p-TYPE Hg1-xCdxTe;Acta Physica Sinica;2000

3. A matrix formalism for the Hall effect in multicarrier semiconductor systems;Journal of Applied Physics;1999-09-15

4. Spectroscopic study of self-organized quantum dot like structures in Ga–In–P superlattices on (311) GaAs;Journal of Applied Physics;1999-03

5. Spectroscopic study of Ga-In-P based self-organized lateral superlattices;Semiconductor Science and Technology;1999-01-01

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