The production and structure of the P-P3anti-site defect in electron-irradiated n-type GaP
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/17/i=36/a=002/pdf
Reference24 articles.
1. Localized vibrational modes of interstitial oxygen and oxygen complexes in GaP
2. The generation by electron irradiation of arsenic anti-site defects in n-type GaAs
3. The properties of gallium arsenide doubly doped with silicon and germanium or silicon and tin
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1. Intrinsic Point Defects in Semiconductors 1999;Materials Science and Technology;2013-02-15
2. Electrical and optical properties and stabilization of the Fermi level in GaP crystals irradiated by electrons and H+ ions;Russian Physics Journal;1994-12
3. Optically detected electron-nuclear double resonance of theS=1 excited state of thePGa−YPdefect in GaP: The neighboringP31andGa69andGa71shells;Physical Review B;1994-10-15
4. The lattice locations of silicon impurities in GaAs: effects due to stoichiometry, the Fermi energy, the solubility limit and DX behaviour;Semiconductor Science and Technology;1994-10-01
5. The causes of emitting-power instability in GaP:N LED;Microelectronics Reliability;1994-01
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