The generation by electron irradiation of arsenic anti-site defects in n-type GaAs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/17/i=15/a=005/pdf
Reference19 articles.
1. Carbon, oxygen and silicon impurities in gallium arsenide
2. A low-symmetry interstitial boron centre in irradiated gallium arsenide
3. The observation of high concentrations of arsenic anti-site defects in electron irradiated n-type GaAs by X-band EPR
4. The deep double donor PGain GaP
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