The properties of gallium arsenide doubly doped with silicon and germanium or silicon and tin
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Growth of GaAs ingots with high free electron concentrations
2. Infrared absorption of mixed silicon isotope pairs in gallium arsenide
3. Silicon donor-acceptor pair defects in gallium arsenide
4. Determination of Fermi‐level effect on Si‐site distribution in GaAs : Si
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1. Assessing site selectivity of Si-Ge in GaAs by isotopic dependent vibrational modes;Materials Science and Engineering: B;2022-05
2. Thermal equilibrium concentrations of the amphoteric dopant Si and the associated carrier concentrations in GaAs;Journal of Applied Physics;1999-11-15
3. The lattice locations of silicon impurities in GaAs: effects due to stoichiometry, the Fermi energy, the solubility limit and DX behaviour;Semiconductor Science and Technology;1994-10-01
4. Chapter 4 Local Vibrational Mode Spectroscopy of Defects in III/V Compounds;Imperfections in III/V Materials;1993
5. Influence of melt composition on electron mobility in Si-doped LEC GaAs;Journal of Crystal Growth;1989-02
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