Arsenic anti-site formation by electron irradiation of n-type GaAs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/20/i=9/a=024/pdf
Reference11 articles.
1. Bistability and Metastability of the Gallium Vacancy in GaAs: The Actuator ofEL2?
2. On the mechanism of formation of AsGa+anti-site defects in electron-irradiated n-type GaAs
3. The generation by electron irradiation of arsenic anti-site defects in n-type GaAs
4. The observation of antisite defects in n-type and undoped GaAs following electron irradiation and annealing
5. The observation of high concentrations of arsenic anti-site defects in electron irradiated n-type GaAs by X-band EPR
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1. Continuous distribution of defect states and band gap narrowing in neutron irradiated GaAs;Journal of Applied Physics;2010-06-15
2. Microscopic observation of vacancy and self-interstitial and the formation of Frenkel pairs in InSb by Mössbauer spectroscopy;Physica B: Condensed Matter;2009-12
3. Defects in Gallium Arsenide;Defects in Microelectronic Materials and Devices;2008-11-19
4. Structural analysis of intrinsic defects in GaAs and A1(x)Gal(1-x)As by magnetooptically detected magnetic resonance spectroscopy;PHYS STATUS SOLIDI B;1999
5. Optically detected magnetic resonance study of an arsenic-antisite–arsenic-vacancy complex in GaAs;Physical Review B;1998-09-15
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