Optically detected magnetic resonance study of an arsenic-antisite–arsenic-vacancy complex in GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.7707/fulltext
Reference10 articles.
1. Identification of the arsenic-antisite-arsenic-vacancy complex in electron-irradiated GaAs
2. Arsenic anti-site formation by electron irradiation of n-type GaAs
3. The Electron Irradiation Induced Defect E1,E2 in GaAs: Arsenic Frenkel Pair Versus Displaced Arsenic Antisite Model
4. Electron-Nuclear Double Resonance Spectrum of anF-Center Electron in Alkali Halides (with NaCl Structure)
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1. Retrospectives: Magnetic Resonance Studies of Intrinsic Defects in Semiconductors;Magnetic Resonance of Semiconductors and Their Nanostructures;2017
2. Identification of an isolated arsenic antisite defect in GaAsBi;Applied Physics Letters;2014-02-03
3. Intrinsic Point Defects in Semiconductors 1999;Materials Science and Technology;2013-02-15
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