Ionised impurity scattering in degenerate semiconductors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/12/i=23/a=018/pdf
Reference33 articles.
1. Space Dependence of Dielectric Function in Si Crystal
2. Scattering of carriers by ionized impurities in semiconductors
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. New generalization of dielectric screening in electronic devices with heavily doped semiconductor region(s). I. Treatment for the quasi-neutral bulk region;Philosophical Magazine B;1993-05
2. Solution of a nonlinear Poisson’s equation for the potential of impurity ions in semiconductors with a spatially variable dielectric constant by an equivalent variational method;Physical Review B;1992-11-15
3. Application of the Kohn variational principle to a particle of effective mass m*;Journal of Physics C: Solid State Physics;1981-10-10
4. Theory of the potential of a donor ion in silicon;International Journal of Quantum Chemistry;1981-05
5. Reply to "Comment on: Electron mobilities based on an exact numerical analysis of the dielectric-function-dependent linearized Poisson's equation for the potential of impurity ions in semiconductors";Physical Review B;1981-04-15
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