New generalization of dielectric screening in electronic devices with heavily doped semiconductor region(s). I. Treatment for the quasi-neutral bulk region
Author:
Affiliation:
1. a IBM Semiconductor Research and Development Center , 1580 Route 52, Hopewell Jct. , New York , 12533–6531 , USA
2. b Department of Electrical Engineering , The State University of New York , New Paltz , New York , 12561 , USA
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642819308219312
Reference51 articles.
1. Heavily doped semiconductors and devices
2. Note on ionized impurity scattering in solids
3. Arfken , G. 1970. Mathematical Methodsfor Physicists, second edition, 472New York: Academic Press.
4. Space Dependence of Dielectric Function in Si Crystal
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