Non-localised impact ionisation using a modified lucky drift theory
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/20/i=13/a=006/pdf
Reference6 articles.
1. Distribution Functions and Ionization Rates for Hot Electrons in Semiconductors
2. Band-structure-dependent transport and impact ionization in GaAs
3. Lucky-drift mechanism for impact ionisation in semiconductors
4. A test of the lucky-drift theory of the impact ionisation coefficient using Monte Carlo simulation
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Spatio-temporal impact ionisation transients: A Lucky drift model study in GaAs;Solid-State Electronics;1995-02
2. Spatial impact ionization transients in GaAs: their origin and characteristics;Semiconductor Science and Technology;1994-06-01
3. High-field transport statistics and impact excitation in semiconductors;Physical Review B;1994-03-15
4. Hot electrons in low-dimensional structures;Reports on Progress in Physics;1991-02-01
5. Impact ionization in silicon: A review and update;Solid-State Electronics;1990-06
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