Spatial impact ionization transients in GaAs: their origin and characteristics
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/9/i=6/a=002/pdf
Reference17 articles.
1. Auger effect in semiconductors
2. Simulations of electron impact ionization rate in GaAs in nonuniform electric fields
3. Calculated electron and hold spatial ionization profiles in bulk GaAs and superlattice avalanche photodiodes
4. Dead-space effects under near-breakdown conditions in AlGaAs/GaAs HBT's
5. A MODEL FOR TRANSIENT IMPACT IONISATION
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. New Models for Impact Ionization in Submicrometer Devices;IEEE Transactions on Electron Devices;2014-04
2. Lucky drift model for non-local impact ionisation incorporating a soft threshold energy;IEE Proceedings - Optoelectronics;2003-04-01
3. Mean gain of avalanche photodiodes in a dead space model;IEEE Transactions on Electron Devices;1996
4. Avalanche multiplication properties of GaAs calculated from spatially transient ionisation coefficients;Solid-State Electronics;1995-12
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