Dead-space effects under near-breakdown conditions in AlGaAs/GaAs HBT's-Reference-Cited by-同舟云学术

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Dead-space effects under near-breakdown conditions in AlGaAs/GaAs HBT's

Published:1993-03 Issue:3 Volume:14 Page:103-106
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

De Carlo A.,Lugli P.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/5619/00215125.pdf?arnumber=215125

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Semiconductor Heterojunctions ☆;Reference Module in Materials Science and Materials Engineering;2018

2. Semiconductor Heterojunctions;Encyclopedia of Materials: Science and Technology;2006

3. Temperature dependence of avalanche multiplication in submicron Al0.6Ga0.4As diodes;Journal of Applied Physics;2002-12-15

4. Dead space effect in space-charge region of collector of AlGaAs/InGaAs p-n-p heterojunction bipolar transistors;Journal of Applied Physics;2001-11-15

5. Avalanche multiplication and ionization coefficient in AlGaAs/InGaAs p-n-p heterojunction bipolar transistors;Applied Physics Letters;2000-12-18

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