Photo-induced changes in the charge state of the divacancy in neutron and electron irradiated silicon
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/15/i=10/a=024/pdf
Reference29 articles.
1. Evidence for Damage Regions in Si, GaAs, and InSb Semiconductors Bombarded with High‐Energy Neutrons
2. Intrinsic defects in neutron-irradiated silicon an infrared study
3. Infrared Spectroscopy of Divacancy-Associated Radiation-Induced Absorption Bands in Silicon
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