Evidence for Damage Regions in Si, GaAs, and InSb Semiconductors Bombarded with High‐Energy Neutrons
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1709962
Reference18 articles.
1. Disordered Regions in Semiconductors Bombarded by Fast Neutrons
2. Nature of Bombardment Damage and Energy Levels in Semiconductors
3. Drift Mobility in Neutron Irradiated n‐Type Germanium
4. Transitory Electrical Properties of n‐Type Germanium After a Neutron Pulse
5. DIRECT OBSERVATION OF NEUTRON DAMAGE IN GERMANIUM
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