High-frequency detection of the formation and stabilization of a radiation-induced defect cluster in semiconductor structures-Reference-Cited by-同舟云学术

High-frequency detection of the formation and stabilization of a radiation-induced defect cluster in semiconductor structures

Published:2015-12 Issue:12 Volume:49 Page:1537-1544
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Puzanov A. S.,Obolenskiy S. V.,Kozlov V. A.,Volkova E. V.,Paveliev D. G.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782615120155.pdf

Reference26 articles.

1. V. S. Vavilov, Radiation Effects in Semiconductors (Fizmatgiz, Moscow, 1963) [in Russian].

2. S. V. Obolenskiy, Izv. Vyssh. Uchebn. Zaved., Elektron., No. 4, 49 (2003).

3. S. V. Obolenskiy, Mikroelektronika 33 (6), 153 (2004).

4. E. V. Volkova and S. V. Obolenskiy, Vestn. Nizhegor. Univ., Ser.: Radiofiz., No. 4, 64 (2013).

5. R. F. Konopleva and V. I. Ostroumov, Interaction of High-Energy Charged Particles with Germanium and Silicon (Atomizdat, Moscow, 1975) [in Russian].

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation of the Formation of a Cascade of Displacements and Transient Ionization Processes in Silicon Semiconductor Structures under Neutron Exposure;Semiconductors;2019-09

2. Computational and Experimental Simulation of Static Memory Cells of Submicron Microcircuits under the Effect of Neutron Fluxes;Semiconductors;2019-09

3. Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices;Semiconductors;2018-10-18

4. Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation;Semiconductors;2016-12