Radiation response of pseudo-MOS transistors fabricated in hardened fully-depleted SIMOX SOI wafers-Reference-Cited by-同舟云学术

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Radiation response of pseudo-MOS transistors fabricated in hardened fully-depleted SIMOX SOI wafers

Published:2009-10 Issue:10 Volume:33 Page:866-869
ISSN:1674-1137
Container-title:Chinese Physics C
language:
Short-container-title:Chinese Phys. C

Author:

Da-Wei Bi,Zheng-Xuan Zhang,Shuai Zhang,Ming Chen,Wen-Jie Yu,Ru Wang,Hao Tian,Zhang-Li Liu

Publisher

IOP Publishing

Subject

Astronomy and Astrophysics,Instrumentation,Nuclear and High Energy Physics

Reference11 articles.

1. SOI: materials to systems

2. Radiation response of fully-depleted MOS transistors fabricated in SIMOX

3. The role of nanoclusters in reducing hole trapping in ion implanted oxides

4. A review of the pseudo-MOS transistor in SOI wafers: operation, parameter extraction, and applications

5. Adaptation of the pseudo-MOS transistor for the characterization of silicon-on-sapphire films

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research on the radiation hardened SOI devices with single-step Si ion implantation;Chinese Physics B;2018-04

2. The radiation hardness of the nitrogen-fluorine implanted buried oxide layer in silicon-on-insulator materials against higher total dose irradiation;Science China Materials;2016-08

3. Effect of co-implantation of nitrogen and fluorine on the fixed positive charge density of the buried oxide layer in SIMOX SOI materials;Acta Physica Sinica;2013

4. Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide;Chinese Physics B;2012-11

5. Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers;Chinese Physics B;2010-10

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