Three-dimensional structure of antiphase domains in GaP on Si(0 0 1)
Author:
Funder
Deutsche Forschungsgemeinschaft
Bundesministerium für Bildung und Forschung
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://iopscience.iop.org/article/10.1088/1361-648X/aafcfb/pdf
Reference39 articles.
1. Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate
2. Electrically pumped continuous-wave 13 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si
3. Room-temperature continuous-wave operation in the telecom wavelength range of GaSb-based lasers monolithically grown on Si
4. Electrically pumped continuous-wave III–V quantum dot lasers on silicon
5. 1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si
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1. Structure and Origin of Antiphase Domains and Related Defects in Thin GaP Epilayers on As-Modified Si(100);Crystal Growth & Design;2022-11-17
2. Optimization of the in situ cleavage process for III–V/Si(001) investigations by cross-sectional scanning tunneling microscopy;Journal of Applied Physics;2021-04-21
3. From surface data to bulk properties: a case study for antiphase boundaries in GaP on Si(001);Journal of Physics D: Applied Physics;2021-02-25
4. Preface: fresh perspectives on internal interfaces;Journal of Physics: Condensed Matter;2019-09-19
5. A study of the strain distribution by scanning X-ray diffraction on GaP/Si for III–V monolithic integration on silicon;Journal of Applied Crystallography;2019-07-24
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