Room-temperature continuous-wave operation in the telecom wavelength range of GaSb-based lasers monolithically grown on Si
Author:
Affiliation:
1. Université de Montpellier, IES, UMR 5214, Montpellier F-34000, France
2. CNRS, IES, UMR 5214, Montpellier F-34000, France
3. III-V Lab, Palaiseau F-91767, France
Funder
Institut Universitaire de France (IUF)
Agence Nationale de la Recherche (ANR)
Publisher
AIP Publishing
Subject
Computer Networks and Communications,Atomic and Molecular Physics, and Optics
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4983389
Reference15 articles.
1. New Advances on Heterogeneous Integration of III–V on Silicon
2. Heterogeneous Silicon Photonic Integrated Circuits
3. Polar-on-nonpolar epitaxy
4. Metamorphic III–V semiconductor lasers grown on silicon
5. High-Performance Quantum Dot Lasers and Integrated Optoelectronics on Si
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