Unfolding the band structure of GaAsBi
Author:
Funder
Engineering and Physical Sciences Research Council
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/29/i=7/a=075001/pdf
Reference23 articles.
1. The effect of temperature dependent processes on the performance of 1.5-μm compressively strained InGaAs(P) MQW semiconductor diode lasers
2. Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37μm
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