Abstract
Abstract
Ferroelectric transistors with semiconductors as the channel material and ferroelectrics as the gate insulator have potential applications in nanoelectronics. We report in-situ modulation of optoelectronic properties of MoSe2 thin flakes on ferroelectric 0.7PbMg1/3Nb2/3O3–0.3PbTiO3 (PMN-PT). Under the excitation of 638 nm laser, the photoresponsivity can be greatly boosted to 59.8 A W−1 and the detectivity to 3.2 × 1010 Jones, with the improvement rates of about 1500% and 450%, respectively. These results suggest hybrid structure photodetector of two-dimensional layered material and ferroelectric has great application prospects in photoelectric detector.
Funder
Key Project
Hunan Provincial Education Department
Subject
Condensed Matter Physics,General Materials Science
Cited by
2 articles.
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