Formation of voids in selective area growth of InN nanorods in SiNx on GaN templates-Reference-Cited by-同舟云学术

Formation of voids in selective area growth of InN nanorods in SiNx on GaN templates

Published:2020-06-05 Issue:2 Volume:4 Page:025002
ISSN:2399-1984
Container-title:Nano Futures
language:
Short-container-title:Nano Futures

Author:

Zeghouane Mohammed^ORCID,André Yamina,Avit Geoffrey,Jridi Jihen,Bougerol Catherine,Coulon Pierre-Marie,Ferret Pierre,Castelluci Dominique,Gil Evelyne,Shields Philip^ORCID,Dubrovskii Vladimir G^ORCID,Trassoudaine Agnès

Funder

Centre National de la Recherche Scientifique

European Commission

Russian Foundation for Basic Research

Engineering and Physical Sciences Research Council

LabEx GANEX

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,General Materials Science,Biomedical Engineering,Atomic and Molecular Physics, and Optics,General Chemistry,Bioengineering

Link

https://iopscience.iop.org/article/10.1088/2399-1984/ab8450/pdf

Reference37 articles.

1. When group-III nitrides go infrared: New properties and perspectives

2. Growth and applications of Group III-nitrides

3. Indium nitride (InN): A review on growth, characterization, and properties

4. Progress and prospects of group-III nitride semiconductors

5. Extending group-III nitrides to the infrared: Recent advances in InN

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