Extending group-III nitrides to the infrared: Recent advances in InN-Reference-Cited by-同舟云学术

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Extending group-III nitrides to the infrared: Recent advances in InN

Published:2015-01-30 Issue:5 Volume:252 Page:1050-1062
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Mi Zetian¹,Zhao Songrui¹

Affiliation:

1. Department of Electrical and Computer Engineering; McGill University; Montreal Quebec H3A 0E9 Canada

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201451628/fullpdf

Reference146 articles.

1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

2. High‐power InGaN/GaN double‐heterostructure violet light emitting diodes

3. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

4. Nitride-based semiconductors for blue and green light-emitting devices

5. InGaN Solar Cells: Present State of the Art and Important Challenges

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1. Many-Body Calculations of Excitons in Two-Dimensional GaN;Crystals;2023-07-01

2. InGaN/GaN QWs on tetrahedral structures grown on graphene/SiC;Microelectronic Engineering;2023-04

3. Metal nitride-based nanostructures for electrochemical and photocatalytic hydrogen production;Science and Technology of Advanced Materials;2022-03-14

4. Recent progress in III-nitride nanosheets: properties, materials and applications;Semiconductor Science and Technology;2021-10-27

5. Overcoming the Challenges Associated with the InN/InGaN Heterostructure via a Nanostructuring Approach for Broad Band Photodetection;ACS Applied Electronic Materials;2021-09-15

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