Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch-Reference-Cited by-同舟云学术

Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch

Published:2020-03-01 Issue:3 Volume:41 Page:032102
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Luo Lin,Liu Jun,Wang Guofang,Wu Yuxing

Abstract

Abstract This paper presents an accurate small-signal model for multi-gate GaAs pHEMTs in switching-mode. The extraction method for the proposed model is developed. A 2-gate switch structure is fabricated on a commercial 0.5 μm AlGaAs/GaAs pHEMT technology to verify the proposed model. Excellent agreement has been obtained between the measured and simulated results over a wide frequency range.

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1088/1674-4926/41/3/032102/pdf

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