An accurate and simplified small signal parameter extraction method for GaN HEMT-Reference-Cited by-同舟云学术

An accurate and simplified small signal parameter extraction method for GaN HEMT

Published:2019-03-08 Issue:6 Volume:47 Page:941-953
ISSN:0098-9886
Container-title:International Journal of Circuit Theory and Applications
language:en
Short-container-title:Int J Circ Theor Appl

Author:

Khusro Ahmad¹^ORCID,Hashmi Mohammad S.²³^ORCID,Ansari Abdul Quaiyum¹^ORCID,Mishra Aditya¹^ORCID,Tarique Mohammad³⁴^ORCID

Affiliation:

1. Department of Electrical EngineeringJMI Delhi New Delhi India

2. School of EngineeringNazarbayev University Astana Kazakhstan

3. Circuit Design Research Lab (CDRL), IIIT Delhi New Delhi India

4. Motorola Solutions Inc. Penang Malaysia

Funder

Ministry of Electronics and Information technology

Publisher

Wiley

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/cta.2622

Reference27 articles.

1. Wide bandgap semiconductor transistors for microwave power amplifiers

2. The toughest transistor yet [GaN transistors]

3. RootDE FanS.Experimental evaluation of large‐signal modeling assumptions based on vector analysis of bias‐dependent S‐parameter data from MESFETs and HEMTs. IEEE MTT‐S International Microwave Symposium Digest1992;255–258.

4. Transistor Modeling: Robust Small-Signal Equivalent Circuit Extraction in Various HEMT Technologies

5. A survey of Gallium Nitride HEMT for RF and high power applications

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