Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD-Reference-Cited by-同舟云学术

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Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD

Published:2012-07 Issue:7 Volume:33 Page:073002
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Tao Zhikuo,Zhang Rong,Xiu Xiangqian,Cui Xugao,Li Li,Li Xin,Xie ZiLi,Zheng Youdou,Zheng Rongkun,Ringer Simon P

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Transport properties and origin of ferromagnetism in (Ga,Mn)As

2. Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

3. Room temperature ferromagnetic properties of (Ga, Mn)N

4. Magnetic properties of n-GaMnN thin films

5. Molecular beam epitaxy of wurtzite (Ga,Mn)N films on sapphire(0001) showing the ferromagnetic behaviour at room temperature

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A susceptor with a ∧-shaped slot in a vertical MOCVD reactor by induction heating;Journal of Semiconductors;2014-09

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