A susceptor with a ∧-shaped slot in a vertical MOCVD reactor by induction heating-Reference-Cited by-同舟云学术

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A susceptor with a ∧-shaped slot in a vertical MOCVD reactor by induction heating

Published:2014-09 Issue:9 Volume:35 Page:092003
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Li Zhiming,Li Hailing,Gan Xiaobing,Jiang Haiying,Li Jinping,Fu Xiaoqian,Han Yanbin,Xia Yingjie,Yin Jianqin,Huang Yimei,Hu Shigang

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/35/i=9/a=092003/pdf

Reference28 articles.

1. High growth rate MOVPE of Al(Ga)N in planetary reactor

2. Low threading dislocation density in GaN films grown on patterned sapphire substrates

3. Analysis of AlGaN/GaN high electron mobility transistors failure mechanism under semi-on DC stress

4. Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition

5. The effect of δ-doping and modulation-doping on Si-doped high Al content n-AlxGa1−xN grown by MOCVD

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1. Fabrication of Planar Heating Chuck Using Nichrome Thin Film as Heating Element for PECVD Equipment;Electronics;2021-10-18

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