The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory-Reference-Cited by-同舟云学术

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The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory

Published:2015-05 Issue:5 Volume:36 Page:056001
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Gao Dan,Liu Bo,Li Ying,Song Zhitang,Ren Wanchun,Li Juntao,Xu Zhen,Lü Shilong,Zhu Nanfei,Ren Jiadong,Zhan Yipeng,Wu Hanming,Feng Songlin

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/36/i=5/a=056001/pdf

Reference14 articles.

1. Nonvolatile high-density high-performance phase-change memory

2. Phase change memory technology

3. Phase Change Memory

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Endurance of chalcogenide optical phase change materials: a review: erratum;Optical Materials Express;2022-10-04

2. Endurance of chalcogenide optical phase change materials: a review;Optical Materials Express;2022-05-10

3. WN coating of TiN electrode to improve the reliability of phase change memory;Materials Science in Semiconductor Processing;2022-02

4. Comprehensive analysis and optimization of interface in device;SPIE Proceedings;2016-10-12

5. Influence of silicon oxide on the performance of TiN bottom electrode in phase change memory;SPIE Proceedings;2016-10-12

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