Influence of silicon oxide on the performance of TiN bottom electrode in phase change memory
Author:
Affiliation:
1. Shanghai Institute of Microsystem and Information Technology (China)
2. Semiconductor Manufacturing International Corp. (China)
Publisher
SPIE
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1. Nonvolatile high-density high-performance phase-change memory;Wicker,1999
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1. Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage*;Chinese Physics B;2021-05-01
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