Design of two-terminal PNPN diode for high-density and high-speed memory applications-Reference-Cited by-同舟云学术

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Design of two-terminal PNPN diode for high-density and high-speed memory applications

Published:2014-01 Issue:1 Volume:35 Page:014006
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Tong Xiaodong,Wu Hao,Liang Qingqing,Zhong Huicai,Zhu Huilong,Zhao Chao,Ye Tianchun

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/35/i=1/a=014006/pdf

Reference13 articles.

1. Considerations for Ultimate CMOS Scaling

2. Intrinsic parameter fluctuations in decananometer mosfets introduced by gate line edge roughness

3. An Ultra-Low Reset Current Cross-Point Phase Change Memory With Carbon Nanotube Electrodes

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