Line-edge roughness induced single event transient variation in SOI FinFETs-Reference-Cited by-同舟云学术

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Line-edge roughness induced single event transient variation in SOI FinFETs

Published:2015-11 Issue:11 Volume:36 Page:114001
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Wu Weikang,An Xia,Jiang Xiaobo,Chen Yehua,Liu Jingjing,Zhang Xing,Huang Ru

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/36/i=11/a=114001/pdf

Reference18 articles.

1. High tolerance to total ionizing dose of Ω-shaped gate field-effect transistors

2. Heavy-Ion-Induced Current Transients in Bulk and SOI FinFETs

3. Transient Radiation Response of Single- and Multiple-Gate FD SOI Transistors

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Variations of single event transient induced by line edge roughness (LER) and temperature in FinFET;Microelectronics Journal;2024-02

2. Single event transient of SOI FinFET with total ionizing dose irradiation;Vibroengineering Procedia;2023-10-20

3. Single event response of ferroelectric spacer engineered SOI FinFET at 14 nm technology node;Scientific Reports;2023-07-10

4. Analysis of location and LET dependence of single event transient in 14 nm SOI FinFET;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2022-11

5. Investigation of Single Event Transient Induced by Process Variability in 14 nm High-k/Metal Gate SOI FinFET Devices;Silicon;2022-09-15

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