Enhanced performance of InGaN/GaN multiple quantum well solar cells with patterned sapphire substrate-Reference-Cited by-同舟云学术

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Enhanced performance of InGaN/GaN multiple quantum well solar cells with patterned sapphire substrate

Published:2013-12 Issue:12 Volume:34 Page:124004
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Jing Liang,Xiao Hongling,Wang Xiaoliang,Wang Cuimei,Deng Qingwen,Li Zhidong,Ding Jieqin,Wang Zhanguo,Hou Xun

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/34/i=12/a=124004/pdf

Reference19 articles.

1. Unusual properties of the fundamental band gap of InN

2. Growth and characterization of InN on sapphire substrate by RF-MBE

3. Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

4. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

5. Design and characterization of GaN∕InGaN solar cells

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of metal-fingers/doped-ZnO transparent electrode on performance of GaN/InGaN solar cell;Journal of Semiconductors;2017-09

2. Optimization of growth and fabrication techniques to enhance the InGaN/GaN multiple quantum well solar cells performance;Superlattices and Microstructures;2017-09

3. Increase of photogenerated carriers in thick quantum wells in InGaN solar cells verified by laser-assisted capacitance-voltage measurement;Materials Research Express;2017-04-24

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