Author:
Jiang Qian,Meng Junhua,Shi Yiming,Yin Zhigang,Chen Jingren,Zhang Jing,Wu Jinliang,Zhang Xingwang
Abstract
Abstract
The behavior of H in β-Ga2O3 is of substantial interest because it is a common residual impurity that is present in β-Ga2O3, regardless of the synthesis methods. Herein, we report the influences of H-plasma exposure on the electric and optical properties of the heteroepitaxial β-Ga2O3 thin films grown on sapphire substrates by chemical vapor deposition. The results indicate that the H incorporation leads to a significantly increased electrical conductivity, a greatly reduced defect-related photoluminescence emission, and a slightly enhanced transmittance, while it has little effect on the crystalline quality of the β-Ga2O3 films. The significant changes in the electrical and optical properties of β-Ga2O3 may originate from the formation of shallow donor states and the passivation of the defects by the incorporated H. Temperature dependent electrical properties of the H-incorporated β-Ga2O3 films are also investigated, and the dominant scattering mechanisms at various temperatures are discussed.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
10 articles.
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