Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/1674-4926/38/i=6/a=064002/pdf
Reference20 articles.
1. AlGaN/GaN-based HEMT on SiC substrate for microwave characteristics using different passivation layers
2. Self-Consistent Subband Calculations of AlxGa1-xN/(AlN)/GaN-Based High Electron Mobility Transistor
3. Oxide interfacial charge engineering towards normally-off AlN/GaN MOSHEMT
4. Interface DOS dependent analytical model development for DC characteristics of normally-off AlN/GaN MOSHEMT
5. Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
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2. Performance analysis of gallium nitride-based DH-HEMT with polarization-graded AlGaN back-barrier layer;Applied Physics B;2023-05-24
3. Breakdown Characteristics Study of III-Nitride/$\beta-\text{Ga}_{2}\mathrm{O}_{3}$ Nano-HEMT as a function of Field-Plate Length & AlN Nucleation Layer Thickness;2022 IEEE Calcutta Conference (CALCON);2022-12-10
4. Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review;Micromachines;2022-12-01
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