Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon-Reference-Cited by-同舟云学术

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Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon

Published:2015-09 Issue:9 Volume:36 Page:093003
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Mao Qinghua,Liu Junlin,Wu Xiaoming,Zhang Jianli,Xiong Chuanbing,Mo Chunlan,Zhang Meng,Jiang Fengyi

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/36/i=9/a=093003/pdf

Reference24 articles.

1. History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination

2. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

3. Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sub-bandgap excited photoluminescence probing of deep defect complexes in GaN doped by Si, Ge and C impurities;Semiconductor Science and Technology;2024-09-12

2. Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate;Journal of Crystal Growth;2024-02

3. GaN:Be I-Layer-Based High-Power p-i-n Diodes Achieving Large Quasi-Vertical MBE Breakdown Performance;IEEE Transactions on Electron Devices;2022-05

4. The influence of temperature and TMGa flow rate on the quality of p-GaN;AIP Advances;2021-03-01

5. Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE;Crystal Growth & Design;2021-02-01

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