GaN-on-Si blue/white LEDs: epitaxy, chip, and package-Reference-Cited by-同舟云学术

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GaN-on-Si blue/white LEDs: epitaxy, chip, and package

Published:2016-04 Issue:4 Volume:37 Page:044006
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Sun Qian,Yan Wei,Feng Meixin,Li Zengcheng,Feng Bo,Zhao Hanmin,Yang Hui

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/37/i=4/a=044006/pdf

Reference11 articles.

1. Nitrogen-polar GaN growth evolution on c-plane sapphire

2. Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates

3. Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

4. Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers

5. Strain relaxation and dislocation reduction in AlGaN step-graded buffer for crack-free GaN on Si (111)

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4. Influence of sidewall grating etching depth on GaN-based distributed feedback laser diodes;Journal of Physics D: Applied Physics;2023-11-07

5. Ethylene for carbon doping of GaN by atmospheric pressure metal organic chemical vapor deposition;Materials Letters;2023-08

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