Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes-Reference-Cited by-同舟云学术

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Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes

Published:2017-06 Issue:5 Volume:38 Page:051001
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Zhao Degang,Yang Jing,Liu Zongshun,Chen Ping,Zhu Jianjun,Jiang Desheng,Shi Yongsheng,Wang Hai,Duan Lihong,Zhang Liqun,Yang Hui

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/38/i=5/a=051001/pdf

Reference20 articles.

1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

4. Group III-nitride lasers: a materials perspective

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1. Improved Design of Slope-Shaped Hole-Blocking Layer and Electron-Blocking Layer in AlGaN-Based Near-Ultraviolet Laser Diodes;Nanomaterials;2024-04-08

2. Evolution of Dislocations and Strains in AlN Grown by High-Temperature Metal–Organic Chemical Vapor Deposition;Crystal Growth & Design;2024-02-06

3. GaN based ultraviolet laser diodes;Journal of Semiconductors;2024-01-01

4. Grading waveguide to improve the performance of ultraviolet laser diodes;Journal of Luminescence;2023-11

5. Optical confinement enhancement of AlGaN-based deep-ultraviolet laser diode by using asymmetrically wide waveguide layers;Applied Physics B;2023-08-23

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