Temperature dependent black phosphorus transistor and memory

Author:

Kumar ArunORCID,Viscardi LoredanaORCID,Faella EnverORCID,Giubileo FilippoORCID,Intonti KimberlyORCID,Pelella AnielloORCID,Sleziona StephanORCID,Kharsah OsamahORCID,Schleberger MarikaORCID,Di Bartolomeo AntonioORCID

Abstract

Abstract We studied the temperature dependent transport properties and memory behaviour of ultrathin black phosphorus field-effect transistors. The devices show electrical conductance and field-effect mobility that decreases with the rising temperature. The field effect mobility, which depends also on the gate voltage sweep range, is 283 cm2V−1s−1 at 150 K and reduces to 33 cm2V−1s−1 at 340 K, when the voltage gate sweep range is ± 50 V. The transfer characteristics show a hysteresis width that increases with the temperature and is exploited to enable non-volatile memories with a wider programming window at higher temperatures.

Funder

Deutsche Forschungsgemeinschaft

Università degli Studi di Salerno

Ministero dell'Università e della Ricerca

Publisher

IOP Publishing

Subject

General Medicine

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