Relaxation-induced lattice misfits and their effects on the emission properties of InAs quantum dots-Reference-Cited by-同舟云学术

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Relaxation-induced lattice misfits and their effects on the emission properties of InAs quantum dots

Published:2007-08-07 Issue:35 Volume:18 Page:355401
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Chen J F,Wang Y Z,Chiang C H,Hsiao R S,Wu Y H,Chang L,Wang J S,Chi T W,Chi J Y

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/18/i=35/a=355401/pdf

Reference27 articles.

1. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

2. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

3. Critical layer thickness for self-assembled InAs islands on GaAs

4. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs

5. Kinetically controlled critical thickness for coherent islanding and thick highly strained pseudomorphic films ofInxGa1−xAs on GaAs(100)

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layers;Semiconductor Science and Technology;2017-10-26

2. Sweeping-rate-dependent photocurrent of GaAs Schottky diode with strain relaxed InAs quantum dots;Japanese Journal of Applied Physics;2015-02-20

3. Coupling Effect of Microwave and Mechanical Forces during the Synthesis of Ferrite Nanoparticles by Microwave-Assisted Ball Milling;Industrial & Engineering Chemistry Research;2013-09-18

4. How do InAs quantum dots relax when the InAs growth thickness exceeds the dislocation-induced critical thickness?;Journal of Applied Physics;2012-01

5. A study on the diamond grinding of ultra-thin silicon wafers;Proceedings of the Institution of Mechanical Engineers, Part B: Journal of Engineering Manufacture;2011-08-08

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