Controlled deterministic implantation by nanostencil lithography at the limit of ion-aperture straggling-Reference-Cited by-同舟云学术

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Controlled deterministic implantation by nanostencil lithography at the limit of ion-aperture straggling

Published:2013-03-18 Issue:14 Volume:24 Page:145304
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Alves A D C,Newnham J,van Donkelaar J A,Rubanov S,McCallum J C,Jamieson D N

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/24/i=14/a=145304/pdf

Reference55 articles.

1. Random dopant induced threshold voltage lowering and fluctuations in sub 50 nm MOSFETs: a statistical 3D `atomistic' simulation study

2. Single-donor ionization energies in a nanoscale CMOS channel

3. Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

4. Transport Spectroscopy of a Single Dopant in a Gated Silicon Nanowire

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4. The center for production of single-photon emitters at the electrostatic-deflector line of the Tandem accelerator of LABEC (Florence);Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2018-05

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